D1006UK fet equivalent, metal gate rf silicon fet.
* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS
* LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
– 1.
* LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
– 14 dB MINIMUM
APPLICATIONS
<.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 72.37KB)